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BUL38D

Inchange Semiconductor
Part Number BUL38D
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistors
Published Aug 23, 2013
Detailed Description isc Silicon NPN Power Transistor INCHANGE Semiconductor BUL38D DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCE...
Datasheet PDF File BUL38D PDF File

BUL38D
BUL38D

Overview
isc Silicon NPN Power Transistor INCHANGE Semiconductor BUL38D DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 450V(Min.
) ·Collector Saturation Voltage : VCE(sat) = 0.
5V(Max) @ IC= 1.
0A ·Very High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in lighting applications and low cost switch- mode power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 800 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-peak tp<5ms 10 A IB Base Current-Continuous 2 A IBM Base Current-peak tp<5ms PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 4 A 80 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-A Thermal Resistance,Junction to Case 1.
56 ℃/W Thermal Resistance,Junction to Ambient 62.
5 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor BUL38D ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; Ib=0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.
2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.
4A VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.
75A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 1A; IB= 0.
2A VBE(sat)-2 Base-Emitter Saturation Voltage ICES Collector Cutoff Current ICEO Collector Cutoff Current IC= 2A; IB= 0.
4A VCE= 800V; VBE= 0 VCE= 800V; VBE= 0, TC= 125℃ VCE= 450V; IB= 0 hFE-1 DC Current Gain IC= 10mA; VCE= 5V hFE-2 DC Current Gain IC= 0.
5A; VCE= 5V hFE-3 DC Current Gain IC= 2A; VCE= 5V VF Diode Forward Voltage IF= ...


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