isc Silicon
NPN Power
Transistor
BUY29
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
:V(BR)CEO= 200V(Min.
) ·Excellent Safe Operating Area ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in switching-control amplifiers, power
gates,switching
regulators, converters, and inverter.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
250
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
12
A
IB
Base Current-Continuous
PT
Total Power Dissipation @ TC≤25℃
TJ...