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FJA4210

PNP Transistor

Description

isc Silicon PNP Power Transistor FJA4210 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·DC Current Gain- : hFE= 50(Min)@ IC= -3A ·Complement to Type FJA4310 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATI...


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