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FJA4210

Fairchild Semiconductor
Part Number FJA4210
Manufacturer Fairchild Semiconductor
Description PNP Epitaxial Silicon Transistor
Published Mar 30, 2005
Detailed Description FJA4210 — PNP Epitaxial Silicon Transistor FJA4210 PNP Epitaxial Silicon Transistor • Audio Power Amplifier • High Curr...
Datasheet PDF File FJA4210 PDF File

FJA4210
FJA4210

Overview
FJA4210 — PNP Epitaxial Silicon Transistor FJA4210 PNP Epitaxial Silicon Transistor • Audio Power Amplifier • High Current Capability : IC= -10A • High Power Dissipation • Wide S.
O.
A • Complement to FJA4310 October 2008 1 TO-3P 1.
Base 2.
Collector 3.
Emitter Absolute Maximum Ratings* Ta = 25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Base Current (DC) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics* Ta=25°C unless otherwise noted Symbol Parameter Test Condition BVCBO Collector-Base Breakdown Voltage BVCEO Collector-Emitter Breakdown Voltage BVEBO Emitter-Base Breakdown Voltage ICBO Collector Cut-off Current IEBO Emitter Cut-off Current hFE * DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage Cob Output Capacitance fT Current Gain Bandwidth Product * Pulse Test: Pulse Width£300ms, Duty Cycle£2% IC=-5mA, IE=0 IC=-50mA, RBE=¥ IE=-5mA, IC=0 VCB=-200V, IE=0 VEB=-6V, IC=0 VCE=-4V, IC=-3A IC=-5A, IB=-0.
5A VCB=-10V, f=1MHz VCE=-5V, IC=-1A hFE Classification Classification hFE R 50 ~ 100 O 70 ~ 140 Ratings -200 -140 -6 -10 -1.
5 100 150 - 55 ~ 150 Units V V V A A W °C °C Min.
-200 -140 -6 50 Typ.
400 30 Max.
-10 -10 180 -0.
5 Units V V V mA mA V pF MHz Y 90 ~ 180 © 2008 Fairchild Semiconductor Corporation FJA4210 Rev.
C1 1 www.
fairchildsemi.
com FJA4210 — PNP Epitaxial Silicon Transistor Typical Characteristics I [A], COLLECTOR CURRENT C V (sat) [V], SATURATION VOLTAGE CE -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 -0 -0 I = - 400mA B I = - 300mA I = - 250mA B B I = - 200mA B I = - 150mA B IB = - 100mA I = - 50mA B I = - 20mA B -1 -2 -3 -4 V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 1.
Static Characterstic -3.
0 -2.
5 -2.
0 -1.
5 -1.
0 -0...


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