isc Silicon
NPN Power
Transistor
FJPF5027
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min) ·High Switching Speed ·Wide SOA ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1100
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
1.
5
A
40
W
150
℃
Tstg
Storage Temperature
-55~150 ℃
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