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FJPF5021

Fairchild Semiconductor
Part Number FJPF5021
Manufacturer Fairchild Semiconductor
Description NPN Silicon Transistor
Published Mar 30, 2005
Detailed Description FJPF5021 FJPF5021 High Voltage and High Reliability • High Speed Switching : tF = 0.1µs(Typ.) • Wide SOA 1 TO-220F 1...
Datasheet PDF File FJPF5021 PDF File

FJPF5021
FJPF5021

Overview
FJPF5021 FJPF5021 High Voltage and High Reliability • High Speed Switching : tF = 0.
1µs(Typ.
) • Wide SOA 1 TO-220F 1.
Base 2.
Collector 3.
Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO V CEO VEBO IC ICP IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 800 500 7 5 10 2 40 150 - 55 ~ 150 Units V V V A A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition BVCBO BVCEO BVEBO VCEX (sus) Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 IC = 2.
5A, IB1 = -IB2 = 1A L = 1mH, Clamped ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Cob fT tON tSTG tF Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time VCB = 500V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.
6A VCE = 5V, IC = 3A IC = 3A, IB = 0.
6A IC = 3A, IB = 0.
6A VCB = 10V, IE = 0, f = 1MHz VCE = 10V, IC = 0.
6A VCC = 200V IC = 5IB1 = -2.
5IB2 = 4A RL = 50Ω Min.
800 500 7 500 15 8 Typ.
80 15 0.
1 Max.
Units V V V V 10 µA 10 µA 50 1 V 1.
5 V pF MHz 0.
5 µs 3 µs 0.
3 µs hFE Classification Classification hFE1 R 15 ~ 30 O 20 ~ 40 Y 30 ~ 50 ©2003 Fairchild Semiconductor Corporation Rev.
A, May 2003 Typical Characteristics IC[A], COLLECTOR CURRENT 5 IB = 600mA IB = 800mA 4 IB = 1A IB = 1.
2A 3 I = 400mA B IB = 200mA I = 100mA 2 B I = 50mA B 1 I = 20mA B IB = 0 0 0 2 4 6 8 10 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1.
Static Characteristic VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 1 VBE(sat) I =5...


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