isc Silicon
NPN Power
Transistor
DESCRIPTION ·DC Current Gain-
: hFE =60-200@ IC= 1A ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
100
VCEO
Collector-Emitter Voltage
80
VEBO
Emitter-Base Voltage
5
IC
Collector Current-Continuous
4
ICM
Collector Current-Peak
8
PC
Collector Power Dissipation @ TC=25℃
40
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
UNIT V V V A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c...