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H1020

Huashan
Part Number H1020
Manufacturer Huashan
Description PNP SILICON TRANSISTOR
Published Oct 16, 2019
Detailed Description Shantou Huashan Electronic Devices Co.,Ltd. PNP SILICON TRANSISTOR H1020 █ POWER AMPLIFIER APPLICATIONS POWER SWITCHIN...
Datasheet PDF File H1020 PDF File

H1020
H1020

Overview
Shantou Huashan Electronic Devices Co.
,Ltd.
PNP SILICON TRANSISTOR H1020 █ POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………900mW VCBO——Collector-Base Voltage………………………………-50V VCEO——Collector-Emitter Voltage……………………………-50V VEBO——Emitter-Base Voltage………………………………-5V IC——Collector Current……………………………………-2mA TO-92 1―Emitter，E 2―Collector，C 3―Base，B █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol BVCBO BVCEO BVEBO ICBO IEBO HFE(1) HFE(2) VCE(sat) VBE(sat) fT Cob tON tSTG tF Characteristics Min Typ Max Unit Test Conditions Collector-Base Breakdown Voltage -50 V IC=-1mA, IE=0 Collector-Emitter Breakdown Voltage -50 V IC=-10mA, IB=0 Emitter-Base Breakdown Voltage -5 V IE=-1mA，IC=0 Collector Cut-off Current -100 nA VCB=-50V, IE=0 Emitter Cut-off Current -100 nA VEB=-5V, IC=0 DC Current Gain 70 240 VCE=-2V, IC=-0.
5A 40 VCE=-2V, IC=-1.
5A Collector- Emitter Saturation Voltage -0.
5 V IC=-1A, IB=-0.
05A Base-Emitter Saturation Voltage -1.
2 V IC=-1A, IB=-0.
05A Current Gain-Bandwidth Product Output Capacitance 100 MHz VCE=-2V, IC=-0.
5A 40 pF VCB=-10V, IE=0，f=1MHz Turn-on Time 0.
1 μS Storage Time 1.
0 μS Fall Time 0.
1 μS █ hFE Classification O 70—140 Y 120—240 Shantou Huashan Electronic Devices Co.
,Ltd.
H1020 Shantou Huashan Electronic Devices Co.
,Ltd.
H1020 ...


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