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MJ3001

NPN Transistor

Description

INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor MJ3001 DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 1000 (Min) @ IC = 5A ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 80V(Min) ·Complement to PNP type MJ2501 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT...

INCHANGE

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