MJ10005

MJ1000 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ1000/D Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 6000 (Typ) @ IC = 3.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors MJ1000 MJ1001* *Motorola Preferred Device NPN 10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60 – 80 VOLTS 90 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ.

MJ1000 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 3A ·Low Collector Saturation Voltage- : VCE (sat)= 2.0V(Max.)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continunous 10 A IB Base Current-Continunous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 0.1 A 90 W 2.

MJ1000 : ·With TO-3 package ·DARLINGTON ·High DC current gain ·Complement to type MJ900/901 APPLICATIONS ·For use as output devices in complementary general purpose amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER MJ1000 VCBO Collector-base voltage MJ1001 MJ1000 VCEO Collector-emitter voltage MJ1001 VEBO IC IB PD Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 80 5 10 0.1 90 200 -55~200 V A A W Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT SavantIC Semiconductor.

MJ1000 : NPN MJ1000 – MJ1001 COMPLEMENTARY POWER DARLINGTONS The MJ1000, MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. Their complementary PNP types are the MJ900 and MJ901 respectively. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC IB PT TJ TS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Ratings MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 Value .

MJ10000 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ10000/D MJ10000 Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor The MJ10000 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications such as: • • • • • Switching Regulators Inverters Solenoid and Relay Drivers Motor Controls Deflection Circuits ™ Data Sheet 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ.

MJ10000 : MJ10000 NPN SILICON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C) Junction Temperature Storage Temperature Symbol VCBO VCEO IC PC Tj Tstg Rating 450 350 20 175 200 -50~150 Unit V V A W °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C) Characteristic Collector Cutoff Current Collector Cutoff Current DC Current Gain Collector- Emitter Saturation Voltage Symbol ICBO ICEO hFE VCE(sat) Test Condition VCB= 450V , IE=0 VCB= 350V , IB=0 VCE= 5V , IC=10A IC=8A , IB=0.8A Min Typ Max 10 10 Unit µA µA V 40 1.5 .

MJ10001 : MJ10001 NPN SILICON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C) Junction Temperature Storage Temperature Symbol VCBO VCEO IC PC Tj Tstg Rating 500 400 20 150 200 -50~150 Unit V V A W °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C) Characteristic Collector Cutoff Current Collector Cutoff Current DC Current Gain Collector- Emitter Saturation Voltage Symbol ICBO ICEO hFE VCE(sat) Test Condition VCB= 500V , IE=0 VCB= 400V , IB=0 VCE= 5V , IC=10A IC=8A , IB=0.8A Min Typ Max 10 10 Unit µA µA V 40 1.5 .

MJ10001 : The MJ10001 is a silicon NPN Darlington transistor in a TO−3 type package designed for high voltage, high−speed, power switching in inductive circuits where fall−time is critical. They are particularly suited for line operated switch−mode applications. Applications: D Switching Regulators D Inverters D Solenoid and Relay Drivers D Motor Controls Absolute Maximum Ratings: Collector−Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Collector−Emitter Voltage, VCEX(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V Collector−Emitter Voltage, VCEO(sus) .

MJ10002 : ·Low Collector-Emitter Sustaining Voltage ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed , power switching in Inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications as: ·Switching Regulators ·Inverters ·Solenoid and Relay Drivers ·Motor Controls ·Deflection Circuits ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE VCEO(SUS) Collector-Emitter Voltage 350 VCBO Collector- Base Voltage 450 VEBO Emitter-Base Voltage 8 IC Collector Current-Continunous 10 ICM Collector Current-P.

MJ10003 : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min.) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed , power switching in Inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications as: ·Switching Regulators ·Inverters ·Solenoid and Relay Drivers ·Motor Controls ·Deflection Circuits ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE VCEO(SUS) Collector-Emitter Voltage 400 VCBO Collector- Base Voltage 500 VEBO Emitter-Base Voltage 8 IC Collector Current-Continunous 10 ICM Collector Current-Pe.

MJ10004 : MJ10004 Darlington Power Transistor Switchmode series NPN Silicon Power Darlington Transistors with Base-Emitter speedup diode are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. Features: • Continuous collector current - IC = 20A. • Switching regulators. • Inverters. • Solenoid and relay drivers. • Motor controls. NPN MJ10004 20 Ampere Power Darlington Transistor 350 Volts 175 Watts Pin 1. Base 2. Emitter Collector(Case) Dimensions Minimum Maximum A 38.75 39.96 B 19.28 22.23 C 7.96 9.28 D 11.18 12.19 E 25.20 26.67 F 0.92 1.09 G 1.38 1.62 H 29..

MJ10004 : The MJ10004 is a silicon NPN Darlington transistor in a TO−3 type package designed for high voltage, high−speed, power switching in inductive circuits where fall−time is critical. It is particularly suited for line operated switch−mode applications. Applications: D Switching Regulators D Inverters D Solenoid and Relay Drivers D Motor Controls Absolute Maximum Ratings: Collector−Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V Collector−Emitter Voltage, VCEX(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector−Emitter Voltage, VCEO(sus) . ..

MJ10004 : MJ10004-MJ10005 High-reliability discrete products and engineering services since 1977 NPN SILICON POWER DARLINGTON TRANSISTORS FEATURES • Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. • Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Collector emitter voltage Collector emitter voltage Collector emitter voltage Emitter base voltage Collector current-Continuous -Peak Base current Total power dissipation @ TC = 25°C Total power dissipation @ TC = 100°C Derate above 25°C Operating and storage temperature range Thermal resistance, junction to case Symbol VCEV VCE.

MJ10005 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ10005/D Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode The MJ10005 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications such as: • • • • • Switching Regulators Inverters Solenoid and Relay Drivers Motor Controls Deflection Circuits ™ Data Sheet MJ10005* *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS Fast Turn–Off Times 40 ns Inductive Fall Time — 25_C (Typ) 650 ns Inductive S.

MJ10005 : MJ10004-MJ10005 High-reliability discrete products and engineering services since 1977 NPN SILICON POWER DARLINGTON TRANSISTORS FEATURES • Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. • Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Collector emitter voltage Collector emitter voltage Collector emitter voltage Emitter base voltage Collector current-Continuous -Peak Base current Total power dissipation @ TC = 25°C Total power dissipation @ TC = 100°C Derate above 25°C Operating and storage temperature range Thermal resistance, junction to case Symbol VCEV VCE.

MJ10005P : ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power,fast switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC Tj Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current- Continuous Collector Power Dissipation Max.Junction Temperature 500 V 400 V 8 V 20 A 30 A 2.5 A 125 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER .