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MJ10003

Part Number	MJ10003
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Darlington Power Transistor
Published	Aug 2, 2018
Detailed Description	isc Silicon NPN Darlington Power Transistor MJ10003 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 40...
Datasheet	MJ10003 PDF File

Overview

isc Silicon NPN Darlington Power Transistor MJ10003 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min.
) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed , power switching in Inductive circuits where fall time is critical.
They are particularly suited for line operated switch-mode applications as: ·Switching Regulators ·Inverters ·Solenoid and Relay Drivers ·Motor Controls ·Deflection Circuits ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE VCEO(SUS) Collector-Emitter Voltage 400 VCBO Collector- Base Voltage 500 VEBO Emitter-Base Voltage 8 IC Collector Current-Continunous 10 ICM Collector Current-Peak 20 IB Base Current-Continunous 2.
5 IBM Base Current-Peak 5.
0 PC Collector Power Dissipation @TC=25℃ 150 Tj Junction Temperature 200 Tstg Storage Temperature Range -65~200 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTER...

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