isc Silicon
PNP Darlington Power
Transistor
INCHANGE Semiconductor
MJE700
DESCRIPTION ·DC Current Gain—
: hFE = 2000(TYP) @ IC= -2A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-4
A
IB
Base Current
PC
Collector Power Dissipation TC=25℃
Ti
Junction Temperature
-0.
1
A
40
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTE...