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MJE700

Fairchild
Part Number MJE700
Manufacturer Fairchild
Description PNP Epitaxial Silicon Darlington Transistor
Published May 7, 2005
Detailed Description MJE700/701/702/703 MJE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gai...
Datasheet PDF File MJE700 PDF File

MJE700
MJE700

Overview
MJE700/701/702/703 MJE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 (Min.
) @ IC= -1.
5 and -2.
0A DC • Complement to MJE800/801/802/803 1 TO-126 2.
Collector 3.
Base 1.
Emitter PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector- Base Voltage : MJE700/701 : MJE702/703 Value - 60 - 80 - 60 - 80 -5 -4 - 0.
1 40 150 - 55 ~ 150 Unit s V V V V V A A W °C °C R1 R2 E Equivalent Circuit C B Collector-Emitter Voltage : MJE700/701 : MJE702/703 Emitter- Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature R 1 ≅ 10 k Ω R 2 ≅ 0.
6 k Ω Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : MJE700/701 : MJE702/703 Collector Cut-off Current : MJE700/701 : MJE702/703 Collector Cut-off Current Test Condition IC = - 10mA, IB = 0 Min.
-60 -80 -100 -100 -100 -500 -2 750 750 100 -2.
5 -2.
8 -3 -1.
2 -2.
5 -3 V V V V V V Max.
Units V V µA µA µA µA mA ICEO VCE = - 60V, IB = 0 VCE = - 80V, IB = 0 VCB = Rated BVCEO, IE = 0 VCB = Rated BVCEO, IE = 0 TC = 100°C VBE = - 5V, IC = 0 VCE = - 3V, IC = - 1.
5A VCE = - 3V, IC = - 2A VCE = - 3V, IC = - 4A IC = - 1.
5A, IB = - 30mA IC = - 2A, IB = - 40mA IC = - 4A, IB = - 40mA VCE = - 3V, IC = - 1.
5A VCE = - 3V, IC = - 2A VCE = - 3V, IC = - 4A ICBO IEBO hFE Emitter Cut-off Current DC Current Gain : MJE700/702 : MJE701/703 : ALL DEVICES VCE(sat) Collector-Emitter Saturation Voltage : MJE700/702 : MJE701/703 : ALL DEVICES Base-Emitter On Voltage : MJE700/702 : MJE701/703 : ALL DEVICES VBE(on) ©2001 Fairchild Semiconductor Corporation Rev.
A1, February 2001 MJE700/701/702/703 Typical Characteristics -5 10k IB= -1000µ s VCE = -3V 0 0µ s IB= -4 00µ s -3 = IB µs IB= -200 IC(A),COLLECTOR CURRENT -4 IB= -900µs IB= -800µ s IB= -700µ s IB= -600µs hFE, ...


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