isc Silicon
NPN Power
Transistor
MJE15034
DESCRIPTION ·Collector-Emitter Breakdown Voltage
: V(BR)CEO=350V ·Good Linearity of hFE ·Complement to Type MJE15035 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
350
V
VCEO Collector-Emitter Voltage
350
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
ICM
-Peack
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
8
A
50
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www...