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MJE15028

INCHANGE
Part Number MJE15028
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 27, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min) ·High Current...
Datasheet PDF File MJE15028 PDF File

MJE15028
MJE15028

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min) ·High Current Gain-Bandwidth Product- : fT= 30MHz(Min)@ IC= 0.
5A ·DC current gain - : hFE = 40 (Min) @IC= 3.
0 A : hFE = 20 (Min) @IC= 4.
0 A ·Complement to Type MJE15029 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MJE15028 APPLICATIONS ·Designed for use as high–frequency drivers in audio amplifiers.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 8 A ICM Collector Current-Peak 16 A IB Base Current Collector Power Dissipation PC @Ta=25℃ Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 2 W 50 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.
5 ℃/W Rth ...


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