Part Number
|
S2010L |
Manufacturer
|
INCHANGE |
Description
|
Thyristor |
Published
|
Sep 15, 2020 |
Detailed Description
|
isc Thyristors
INCHANGE Semiconductor
S2010L
DESCRIPTION ·With TO-220 packaging ·High heat dissipation and durability ...
|
Datasheet
|
S2010L
|
Overview
isc Thyristors
INCHANGE Semiconductor
S2010L
DESCRIPTION ·With TO-220 packaging ·High heat dissipation and durability ·Thermowatt construction for low thermal ·Glass passivated junctions and center gate fire for greater
parameter uniformity and stability ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM Repetitive peak reverse voltage
IT(RMS) ITSM PG(AV)
RMS on-state current
Surge non-repetitive on-state current ( 1/2 cycle,sine wave;Tc=25℃ )
Average gate power dissipation
Tj
Operating junction temperature
Tstg Stora...
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