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S2010L

Part Number	S2010L
Manufacturer	INCHANGE
Description	Thyristor
Published	Sep 15, 2020
Detailed Description	isc Thyristors INCHANGE Semiconductor S2010L DESCRIPTION ·With TO-220 packaging ·High heat dissipation and durability ...
Datasheet	S2010L PDF File

Overview

isc Thyristors INCHANGE Semiconductor S2010L DESCRIPTION ·With TO-220 packaging ·High heat dissipation and durability ·Thermowatt construction for low thermal ·Glass passivated junctions and center gate fire for greater parameter uniformity and stability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RMS) ITSM PG(AV) RMS on-state current Surge non-repetitive on-state current ( 1/2 cycle,sine wave;Tc=25℃ ) Average gate power dissipation Tj Operating junction temperature Tstg Stora...

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