isc Silicon
PNP Power
Transistors
2SB337
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -0.
29V(Typ.
) @IC= -4A ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency power output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-40
V
VCER
Collector-Emitter Voltage
-30
V
VEBO
Emitter-Base Voltage
-10
V
IC
Collector Current-Continuous
-7
A
IE
Emitter Current-Continuous
7
A
IB
Base Current-Continuous
-1
A
PC
Collector Power Dissipation
30
W
TJ
Junction Temperature
100
℃
Tstg
Storage Temperature
...