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2SB337

SavantIC
Part Number 2SB337
Manufacturer SavantIC
Description SILICON POWER TRANSISTOR
Published Feb 12, 2009
Detailed Description SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB337 DESCRIPTION ·W...
Datasheet PDF File 2SB337 PDF File

2SB337
2SB337


Overview
SavantIC Semiconductor www.
DataSheet4U.
com Product Specification Silicon PNP Power Transistors 2SB337 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage APPLICATIONS ·For audio frequency power output applications PINNING(see Fig.
2) PIN 1 2 3 Base Emitter Collector Fig.
1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IE IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Base current Collector power dissipation Junction temperature Storage temperature TC-55 CONDITIONS Open emitter Open base Open collector VALUE -40 -30 -10 -7 7 -1 30 100 -55~100 UNIT V V V A A A W SavantIC Semiconductor www.
DataSheet4U.
com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP.
2SB337 SYMBOL MAX UNIT V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE Collector-emitter breakdown voltage IC=-10mA; IB=0 IE=-1mA; IC=0 IC=-4A; IB=-0.
4A IC=-1A ;VCE=-2V VCB=-30V; IE=0 VEB=-10V; IE=0 IC=-1A ; VCE=-2V -30 V Emitter-base breakdown voltage -10 V Collector-emitter saturation voltage -0.
29 V Base-emittter on voltage -0.
38 V Collector cut-off current -0.
1 mA Emitter cut-off current -0.
1 mA DC current gain 50 90 165 hFE Classifications A 50-100 B 80-165 2 SavantIC Semiconductor www.
DataSheet4U.
com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB337 Fig.
2 outline dimensions (unindicated tolerance:±0.
1mm) 3 ...


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