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2SB536

Part Number 2SB536
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 17, 2020
Detailed Description isc Silicon PNP Power Transistors 2SB536 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·Co...
Datasheet 2SB536





Overview
isc Silicon PNP Power Transistors 2SB536 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.
) ·Complement to Type 2SD381 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier, low speed switching.
·Suitable for driver of 60~100 watts audio amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.
5 A ICM Collector Current-Peak -3.
0 A IB Base Current -0.
3 A Collector Power Dissipation@TC=25℃ 20 PC W Collector Po...






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