isc Silicon
PNP Power
Transistor
2SB595
DESCRIPTION ·Low Collector Saturation Voltage
:VCE(sat)= -2.
0(V)(Max)@IC= -4A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min) ·Complement to Type 2SD525 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications.
·Recommended for 30W high-fidelity audio frequency amplifier
output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-5
A
IE
Emitter Current-Continuous
5
A
IB
Base Current-Continuous
...