isc Silicon
PNP Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·Collector Power Dissipation-
: PC= 30W@ TC= 25℃ ·Low Collector Saturation Voltage-
: VCE(sat)= -1.
0V(Max)@ IC= -3A ·Complement to Type 2SD1354 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-3
A
IB
Base Current-Continuous
Collector Power Dissipation @Ta=25℃ PC Co...