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2SB900

Part Number	2SB900
Manufacturer	SavantIC
Description	SILICON POWER TRANSISTOR
Published	Feb 16, 2009
Detailed Description	SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB900 DESCRIPTION ·W...
Datasheet	2SB900 PDF File

Overview

SavantIC Semiconductor www.
DataSheet4U.
com Product Specification Silicon PNP Power Transistors 2SB900 DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For power amplifier and switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.
1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -50 -50 -5 -4 40 150 -50~150 UNIT V V V A W SavantIC Semiconductor www.
DataSheet4U.
com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-1mA; IB=0 IC=-1mA; IE=0 IE=-1mA; IC=0 IC=-2A; IB=-0.
2A IC=-2A ; VCE=-4V VCB=-50V; IE=0 VCE=-50V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-4V 40 MIN -50 -50 -5 2SB900 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO ICEO IEBO hFE TYP.
MAX UNIT V V V -1.
0 -1.
4 -0.
1 -1.
0 -0.
1 V V mA mA mA 2 SavantIC Semiconductor www.
DataSheet4U.
com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB900 Fig.
2 Outline dimensions (unindicated tolerance:±0.
10mm) 3 ...

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