isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Collector-Base Breakdown Voltage-
: V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for switching
regulator and high voltage
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1000
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base voltage
7
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
3
A
...