isc Silicon
NPN Power
Transistors
DESCRIPTION · Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)- BD751B = 130V(Min)- BD751C
·High Power Dissipation ·Complement to Type BD750B/750C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high voltage and high power amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
BD751B
110
VCEV
Collector-Emitter Voltage
V
BD751C 140
BD751B 100
VCEO(SUS) Collector-Emitter Voltage
V
BD751C 130
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
20
A
IB
Base Current-Continuous
5
A
PC
Collector Power Dissipation@TC=25℃ 2...