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MJE181

Part Number MJE181
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 18, 2020
Detailed Description isc Silicon NPN Power Transistor MJE181 DESCRIPTION ·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = 60V ·DC Curre...
Datasheet MJE181




Overview
isc Silicon NPN Power Transistor MJE181 DESCRIPTION ·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = 60V ·DC Current Gain— : hFE = 30(Min) @ IC= 0.
5 A = 12(Min) @ IC= 1.
5 A ·Complement to the PNP MJE171 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low power audio amplifier ·Low current high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 80 VCEO Collector-Emitter Voltage 60 VEBO Emitter-Base Voltage 7 IC Collector Current-Continuous 3 ICM Collector Current-peak 6 IB Base Current 1 Collector Power Dissipation PC Ta=25℃ Collector Power Dissipatio...






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