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MJE1100

INCHANGE
Part Number MJE1100
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 9, 2020
Detailed Description isc Silicon NPN Darlington Power Transistor MJE1100 DESCRIPTION ·High DC Current Gain-hFE= 750(Min)@ IC= 3A ·Collector...
Datasheet PDF File MJE1100 PDF File

MJE1100
MJE1100

Overview
isc Silicon NPN Darlington Power Transistor MJE1100 DESCRIPTION ·High DC Current Gain-hFE= 750(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for driver and output stages in complementary audio amplifier and general-purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER Collector-Emitter Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.
1 A 70 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.
8 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor MJE1100 ELECTRICA...


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