isc Silicon
NPN Darlington Power
Transistor
DESCRIPTION ·Collector–Emitter Breakdown Voltage—
: V(BR)CEO = 60 V ·DC Current Gain—
: hFE = 750(Min) @ IC= 2A = 100(Min) @ IC= 4A
·Complement to Type MJE701 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
IB
Base Current
PC
Collector Power Dissipation TC=25℃
Ti
Junction Temperature
0.
1
A
40
W
150
...