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MJE800

Part Number	MJE800
Manufacturer	Fairchild
Description	NPN Transistor
Published	May 7, 2005
Detailed Description	MJE800/801/802/803 MJE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gai...
Datasheet	MJE800 PDF File

Overview

MJE800/801/802/803 MJE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 (Min.
) @ IC= 1.
5 and 2.
0A DC • Complement to MJE700/701/702/703 1 TO-126 2.
Collector 3.
Base 1.
Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature : MJE800/801 : MJE802/803 : MJE800/801 : MJE802/803 Value 60 80 60 80 5 4 0.
1 40 150 - 55 ~ 150 Units V V V V V A A W °C °C R1 R2 E B Equivalent Circuit C R 1 ≅ 10 k Ω R 2 ≅ 0.
6 k Ω Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : MJE800/801 : MJE802/803 Collector Cut-off Current : MJE800/801 : MJE802/803 Collector Cut-off Current Test Condition IC = 50mA, IB = ...

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