isc Silicon
PNP Darlington Power
Transistor
DESCRIPTION ·High DC Current Gain
: hFE= 2000(Min.
)@ IC= -12A, VCE= -4V ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -120V(Min) ·Complement to Type 2SD2083 ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for driver of solenoid, motor and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-120
V
VCEO Collector-Emitter Voltage
-120
V
VEBO Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-25
A
ICM
Collector Current-Peak
-40
A
IB
Base Current- Continuous
PC
Collector Power Dissipat...