2SB1411

2SB1411 : TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1411 Switching Applications Hammer Drive, Pulse Motor Drive Applications 2SB1411 Unit: mm • High DC current gain: hFE = 1500 (min) (VCE = −3 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1 A) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −100 V Collector-emitter voltage VCEO −100 V Emitter-base voltage VEBO −7 V Collector current DC Peak IC −2 A ICP −3 Base current IB −0.5 A Collector power dissipation Ta = 25°C Tc = 25°C PC 2.0 W 20 Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C JEDEC ― JEITA .

2SB1411 : ·With TO-220F package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Switching applications ·Hammer drive ,pulse motor drive applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25 PC Collector power dissipation CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -7 -2 -3 -0.5 20 UNIT V V V A A A W Tj Tstg Junction temperature Storage temperature 150 -55~150 SavantIC Semiconductor w.

2SB1412 : Low frequency transistor (−20V,−5A) 2SB1412 zFeatures 1) Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2118. zStructure Epitaxial planar type PNP silicon transistor zDimensions (Unit : mm) 2SB1412 ROHM : CPT3 EIAJ : SC-63 ∗ Denotes hFE (1) Base (2) Collector (3) Emitter zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage VCBO −30 Collector-emitter voltage VCEO −20 Emitter-base voltage VEBO −6 Collector current −5 IC −10 Collector power dissipation 2SB1412 PC 1 10 Junction temperature Tj 150 Storage temperature Tstg −55 to 150 ∗1 Single pulse, Pw=10m.

2SB1412 : ·Low collector-to-emitter saturation voltage : VCE(sat)= -1.0V(Max)@IC= -4A ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM PC TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ TC=25℃ Junction Temperature -30 V -20 V -6 V -5 A -10 A 1.0 W 10 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1412 isc website：www.iscsemi.com.

2SB1412 : TO-252 PNP 。Silicon PNP transistor in a TO-252 Plastic Package.  / Features ,， 2SD2118 。 Low VCE(sat),excellent DC current gain characteristics, complements the 2SD2118.  / Applications 。 Medium power amplifier applications. / Equivalent Circuit / Pinning 12 3 4 PIN1：Base PIN 2,4：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range P 82～180 Q 120～270 R 180～390 http://www.fsbrec.com 1/6 2SB1412 Rev.E May.-2016 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Peak Collector Current – Continuous Collector P.

2SB1412 : 2SB1412 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1.BASE 2.COLLECTOR 3.EMITTER 2 3 Features: * Excellent DC Current Gain Characteristics * Low VCE(Sat) 1 D-PAK(TO-252) Mechanical Data: * Case : Molded Plastic * Weight : 0.925 grams ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Current Total Device Disspation TA = 25°C Junction Temperature Storage Temperature Symbol www.DataSheet4U.com Value -30 -20 -6 -5 1.0 +150 -55 to +150 Unit V V V A W ˚C ˚C VCBO VCEO VEBO IC PD Tj Tstg Device Marking 2SB1412 = B1412 WEITRON http://www.weitron.com.tw 1/4 28-Oct-05 2SB1412 ELECTRICAL CHARACTERISTICS .

2SB1412 : The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor.  FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SB1412L-x-TN3-R 2SB1412G-x-TN3-R TO-252 Note: Pin Assignment: B: Base C: Collector E: Emitter Pin Assignment 123 BCE Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 5 QW-R209-021.E 2SB1412 PNP SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATING (TA=25C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO.

2SB1412 : SMD Type Low Frequency Transistor 2SB1412 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low VCE(sat). +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 PNP silicon transistor. 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current pulse Collector power dissipation (Tc=25 ) Junction temperature Storage temperature * Single pulse ,PW=10ms Symbol VCBO VCEO VEBO IC ICP PC PC Tj Tstg Rating -30 -20 -6 -5 -.

2SB1412 : Elektronische Bauelemente 2SB1412 -5A , -30V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Designed for general Low VCE(sat) D-Pack (TO-252) CLASSIFICATION OF hFE Product-Rank 2SB1412-P 2SB1412-Q Range 82~180 120~270 2SB1412-R 180~390 A BC D PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch Collector 2 1 Base 3 Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current -Continuous Collector Power Dissipation Junction and Storage Temperature Range VCBO VCEO.

2SB1414 : Power Transistors 2SB1414 Silicon PNP epitaxial planar type For low-frequency driver/high power amplification Complementary to 2SD2134 3.8±0.2 Unit: mm 7.5±0.2 4.5±0.2 ■ Features • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • High transition frequency fT • Allowing automatic insertion with radial taping 10.8±0.2 0.65±0.1 2.5±0.1 0.85±0.1 1.0±0.1 0.8 C 90˚ 0.8 C 16.0±1.0 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Juncti.

2SB1416 : Power Transistors 2SB1416 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD2136 3.8±0.2 Unit: mm 7.5±0.2 4.5±0.2 ■ Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • Allowing automatic insertion with radial taping 10.8±0.2 0.65±0.1 2.5±0.1 0.85±0.1 1.0±0.1 0.8 C 90˚ 0.8 C 16.0±1.0 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temp.

2SB1417 : Power Transistors 2SB1417, 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137 and 2SD2137A Unit: mm s Features q q q Parameter Collector to base voltage Collector to 2SB1417 2SB1417A 2SB1417 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –60 –80 –60 –80 –6 –5 –3 15 2.0 150 –55 to +150 Unit V 2.5±0.2 s Absolute Maximum Ratings 13.0±0.2 4.2±0.2 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing automatic insertion with radial taping (TC=25˚C) 5.0±0.1 10.0±0.2 1.0 90° 1.2±0.1 C1.0 2.25±0.2 18.0±0.5 Solder Dip 0.35±0.1 0.65±0.1 1.05±0.1 0.55±0.1 emitter .

2SB1417A : Power Transistors 2SB1417, 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137 and 2SD2137A Unit: mm s Features q q q Parameter Collector to base voltage Collector to 2SB1417 2SB1417A 2SB1417 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –60 –80 –60 –80 –6 –5 –3 15 2.0 150 –55 to +150 Unit V 2.5±0.2 s Absolute Maximum Ratings 13.0±0.2 4.2±0.2 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing automatic insertion with radial taping (TC=25˚C) 5.0±0.1 10.0±0.2 1.0 90° 1.2±0.1 C1.0 2.25±0.2 18.0±0.5 Solder Dip 0.35±0.1 0.65±0.1 1.05±0.1 0.55±0.1 emitter .

2SB1418 : Power Transistors 2SB1418, 2SB1418A Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2138 and 2SD2138A 13.0±0.2 4.2±0.2 Unit: mm 5.0±0.1 10.0±0.2 1.0 s Features q q q High foward current transfer ratio hFE High-speed switching Allowing automatic insertion with radial taping (TC=25˚C) Ratings –60 –80 –60 –80 –5 –4 –2 15 2.0 150 –55 to +150 Unit V 90° 2.5±0.2 1.2±0.1 C1.0 2.25±0.2 18.0±0.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1418 2SB1418A 2SB1418 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 0.35±0.1 0.65±0.1 1.05±0.1 0.55±0.1 0.55±0.1 C1.0 1 2 3 emitter voltage 2SB1418A Emitter to base volt.

2SB1418A : Power Transistors 2SB1418, 2SB1418A Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2138 and 2SD2138A 13.0±0.2 4.2±0.2 Unit: mm 5.0±0.1 10.0±0.2 1.0 s Features q q q High foward current transfer ratio hFE High-speed switching Allowing automatic insertion with radial taping (TC=25˚C) Ratings –60 –80 –60 –80 –5 –4 –2 15 2.0 150 –55 to +150 Unit V 90° 2.5±0.2 1.2±0.1 C1.0 2.25±0.2 18.0±0.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1418 2SB1418A 2SB1418 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 0.35±0.1 0.65±0.1 1.05±0.1 0.55±0.1 0.55±0.1 C1.0 1 2 3 emitter voltage 2SB1418A Emitter to base volt.

2SB1419 : ·With TO-3PL package ·Wide area of safe operation ·Low collector saturation voltage APPLICATIONS ·For low frequency and high power amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3PL) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -160 -160 -5 -12 -20 120 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.co.