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2SB1412

Part Number	2SB1412
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Nov 9, 2016
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·Low collector-to-emitter saturation voltage : VCE(sat)= -1.0V(Max)@IC= -4...
Datasheet	2SB1412 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·Low collector-to-emitter saturation voltage : VCE(sat)= -1.
0V(Max)@IC= -4A ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM PC TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ TC=25℃ Junction Temperature -30 V -20 V -6 V -5 A -10 A 1.
0 W 10 150 ℃ Tstg Storage Temperature Range -5...

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