2SB1507

2SB1502 : Power Transistors 2SB1502 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2275 6.0 20.0±0.5 φ 3.3±0.2 5.0±0.3 3.0 Unit: mm 26.0±0.5 10.0 s Features q q q Optimum for 55W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): 2.5V 1.5 2.0 4.0 1.5 Solder Dip s 20.0±0.5 2.5 2.0±0.3 3.0±0.3 1.0±0.2 Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –120 –100 –5 –8 –5 60 3.5 150 –55 to +150 Unit V V V A 2.7±0.3 0.6±0.2 5.45±0.3 10.9±0.5 Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector cu.

2SB1502 : • High DC Current Gain: hFE= 5000(Min)@lc= -4A • Low-Collector Saturation Voltage: VCE(satr -2.5V(Max.)@lc= -4A • Complement to Type 2SD2275 1 2 3 PIN 1.BASE 2. COLLECTOR 3. EMITTER TO-3PL package APPLICATIONS • Designed for power amplifier applications • Optimum for 55W HiFi output applications. in .*T \ ABSOLUTE MAXIMUM RATINGS(Ta=25x:) SYMBOL PARAMETER VALUE UNIT D A VCBO Collector-Base Voltage -120 V uWf U iW !'-**M VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V mm Ic Collector Current-Continuous -5 A DIM A B C D E F G WIN 2S.50 1950 4.50 0.90 2.30 2.40 10.80 3.10 0^0 MAX 20 JO 5.50 1.10 1.20 2.60 11.00 3.30 0.70 21.00 4.10 2.60 3.50 2.10 4.1.

2SB1502 : ·High DC Current Gain- : hFE= 5000(Min)@IC= -4A ·Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -4A ·Complement to Type 2SD2275 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ·Optimum for 55W HiFi output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -8 A 60 W 3.5 .

2SB1503 : Power Transistors 2SB1503 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2276 6.0 20.0±0.5 φ 3.3±0.2 5.0±0.3 3.0 Unit: mm 26.0±0.5 10.0 s Features q q q Optimum for 110W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): –2.5V 1.5 2.0 4.0 1.5 Solder Dip s 20.0±0.5 2.5 2.0±0.3 3.0±0.3 1.0±0.2 Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –160 –140 –5 –12 –7 120 3.5 150 –55 to +150 Unit V V V A 2.7±0.3 0.6±0.2 5.45±0.3 10.9±0.5 Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collecto.

2SB1503 : ·With TO-3PL package ·Complement to type 2SD2276 ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power amplification ·Optimum for 110W Hi-Fi output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PL) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 3.5 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -160 -140 -5 -7 -12 120 W UNI.

2SB1503 : • High DC Current Gain: hFE= 5000(Min)@lc= -7A • Low-Collector Saturation Voltage: VcEsatr -2.5V(Max.)@lc= -7A • Complement to Type 2SD2276 1 2 3 PIN 1.BASE 2. COLLECTOR TO-3PL package APPLICATIONS • Designed for power amplifier applications • Optimum for 11OW HiFi output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V mm Ic Collector Current-Continuous -7 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25°C -12 A 120 W PC Collector Power Dissipation @ Ta=25'C Tj 3.5 Junction Temperature 150 °C DIM A B C D E F G H J .

2SB1503 : ·High DC Current Gain- : hFE= 5000(Min)@IC= -7A ·Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD2276 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ·Optimum for 110W HiFi output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -12 A 120 W 3.

2SB1504 : Power Transistors 2SB1504 Silicon PNP epitaxial planar type darlington Unit: mm For power switching • High forward current transfer ratio hFE • High-speed switching • Allowing automatic insertion with radial taping 3.8±0.2 10.8±0.2 7.5±0.2 4.5±0.2 0.65±0.1 2.5±0.1 0.85±0.1 1.0±0.1 0.8 C 90˚ 0.8 C 16.0±1.0 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −50 −50 −7 −8 −12 1.5 150 −55 to +150 Unit V V V A A W °C °C 0.7.

2SB1507 : Ordering number:EN3713 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1507/2SD2280 50V/7A High-Current Switching Applications Applications · Relay drivers, high-speed inverters, converters. Features · Low collector-to-emitter saturation voltage : VCE(sat)=(–)0.4V max. · Wide ASO and highly registant to breakdown. · Micaless package facilitating easy mounting. Package Dimensions unit:mm 2039A [2SB1507/2SD2280] ( ) : 2SB1507 Specifications E : Emitter C : Collector B : Base SANYO : TO-3PML Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbo.

2SB1507 : ·With TO-3PML package ·Low collector saturation voltage ·Complement to type 2SD2280 ·Wide area of safe operation APPLICATIONS ·For use in relay drivers ,high-speed Inverters,converters PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 40 150 -55~150 CONDITIONS Open emitter Open base Open collector MAX -60 -50 -6 -7 -20 3.0 W UNIT V V V A A SavantIC Semiconductor www.Data.

2SB1507 : • Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@lc= -4A • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SD2280 IH I I I | I | III ' PIN 1 BASE 2. COLLECTOR 3. EMITTER TO-3PML package APPLICATIONS • Designed for relay drivers, high-speed inverters, converters. I k s t Qi'd'. _ (cf\ A •:• -*. C ABSOLUTE MAXIMUM RATINGS(Ta=25 r ) SYMBOL PARAMETER VALUE UNIT f \~ u 22 f -'J i j •"» VCBO Collector-Base Voltage -60 V Ji^d IL',.".T t vr_ it"H e \ 4 . i -- .:v^i •^i '^B Q •f VCEO Collector-Emitter Voltage -50 V 1 k 1*.». VEBO Emitter-Base Voltage -6 V mm Ic Collector Current-Continuous -7 A DIM MIN A 19.90 B 15.90 5.50 C D 0.90 3..

2SB1508 : Ordering number:EN3714 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1508/2SD2281 50V/12A High-Current Switching Applications Applications · Relay drivers, high-speed inverters, converters. Features · Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. · Wide ASO and highly registant to breakdown. · Micaless package facilitating easy mounting. Package Dimensions unit:mm 2039A [2SB1508/2SD2281] ( ) : 2SB1508 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junctio.

2SB1508 : ·With TO-3PML package ·Low collector saturation voltage ·Complement to type 2SD2281 ·Wide area of safe operation APPLICATIONS ·For use in relay drivers ,high-speed Inverters,converters PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 45 150 -55~150 CONDITIONS Open emitter Open base Open collector MAX -60 -50 -6 -12 -25 3.0 W UNIT V V V A A SavantIC Semiconductor www.Dat.

2SB1508 : ·Low Collector Saturation Voltage :VCE(sat)= -0.5(V)(Max)@IC= -6A ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD2281 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for relay drivers,high-speed inverters,converters. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -25 A 3 W 45 150 ℃ Tstg Storage T.

2SB1509 : Ordering number:EN3715 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1509/2SD2282 High-Current Switching Applications Applications · Relay drivers, high-speed inverters, converters. Features · Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V max. · Wide ASO and highly registant to breakdown. · Micaless package facilitating easy mounting. Package Dimensions unit:mm 2039A [2SB1509/2SD2282] ( ) : 2SB1509 Specifications E : Emitter C : Collector B : Base SANYO : TO-3PML Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VC.

2SB1509 : ·With TO-3PML package ·Low collector saturation voltage ·Complement to type 2SD2282 ·Wide area of safe operation APPLICATIONS ·For use in relay drivers ,high-speed Inverters,converters PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 50 150 -55~150 Open emitter Open base Open collector CONDITIONS MAX -60 -50 -6 -15 -30 3.0 W UNIT V V V A A SavantIC Semiconductor www.Dat.