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2SB1502

Part Number	2SB1502
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 18, 2020
Detailed Description	isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 5000(Min)@IC= -4A ·Low-Collector ...
Datasheet	2SB1502 PDF File

Overview

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 5000(Min)@IC= -4A ·Low-Collector Saturation Voltage- : VCE(sat)= -2.
5V(Max.
)@IC= -4A ·Complement to Type 2SD2275 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ·Optimum for 55W HiFi output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -8 A 60 W 3.
5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1502 isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB1502 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise speci...

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