isc Silicon
PNP Power
Transistor
DESCRIPTION ·Low Collector Saturation Voltage
:VCE(sat)= -0.
5(V)(Max)@IC= -6A ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD2281 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for relay drivers,high-speed inverters,converters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-12
A
ICM
Collector Current-Peak
Collector Power Dissipation @ Ta=25℃
PC Collector Power Dissipation @ TC=25℃
TJ
Junction Tempera...