isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
:V(BR)CEO= 300V(Min) ·DC Current Gain-
: hFE= 40-170 @IC= 50mA, VCE= 10V ·High Current-Gain Bandwidth Product ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for color TV chroma output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
300
V
VCEO Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
150
mA
IE
Emitter Current-Continuous
Collector Power Dissipation
@ Ta=25℃ PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperat...