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2SC1509

Panasonic Semiconductor
Part Number 2SC1509
Manufacturer Panasonic Semiconductor
Description Silicon NPN Transistor
Published Mar 22, 2005
Detailed Description Transistors 2SC1509 Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA0777 (...
Datasheet PDF File 2SC1509 PDF File

2SC1509
2SC1509

Overview
Transistors 2SC1509 Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA0777 (2SA777) 5.
9±0.
2 Unit: mm 4.
9±0.
2 8.
6±0.
2 ■ Features • High collector-emitter voltage (Base open) VCEO 13.
5±0.
5 0.
7–+00.
.
23 • Optimum for the driver stage of a low-frequency and 25 W to 30 0.
7±0.
1 W output amplifier ■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 80 V c type Collector-emitter voltage (Base open) VCEO 80 V n d ge.
ed Emitter-base voltage (Collector open) VEBO 5 (3.
2) V le sta ntinu Collector current IC 0.
5 A a e cyc isco Peak collector current ICP 1 A life d, d Collector power dissipation PC 750 mW n u duct type Junction temperature Tj 150 °C te tin Pro ued Storage temperature Tstg −55 to +150 °C 0.
45+–00.
.
12 0.
45+–00.
.
12 (1.
27) (1.
27) 1: Emitter 123 2: Collector 3: Base 2.
54±0.
15 EIAJ: SC-51 TO-92L-A1 Package in n es follopwlianngefdoudriscontin ■ Electrical Characteristics Ta = 25°C ± 3°C a o clud pe, Parameter Symbol Conditions Min c ed in ce ty Collector-base voltage (Emitter open) tinu nan Collector-emitter voltage (Base open) M is iscon ainte Emitter-base voltage (Collector open) e/D e, m Collector-base cutoff current (Emitter open) D anc typ Forward current transfer ratio Maintentenance Collector-emitter saturation voltage main Base-emitter saturation voltage ned Transition frequency (pla Collector output capacitance VCBO VCEO VEBO ICBO hFE1 * hFE2 VCE(sat) VBE(sat) fT Cob IC = 10 µA, IE = 0 80 IC = 100 µA, IB = 0 80 IE = 10 µA, IC = 0 5 VCB = 20 V, IE = 0 VCE = 10 V, IC = 150 mA 130 VCE = 5 V, IC = 500 mA 50 IC = 300 mA, IB = 30 mA IC = 300 mA, IB = 30 mA VCB = 10 V, IE = −50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz Typ Max 0.
1 330 100 0.
2 0.
4 0.
85 1.
2 120 11 20 Unit V V V µA   V V MHz pF (Common base, input open circuited) Note) 1.
Measuring methods are based on JAPANESE INDUS...


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