isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 20V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·AF power amplifier ·For electronic flash unit ·Converter
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
20
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
8
A
10
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2S...