isc Silicon
NPN Power
Transistor
DESCRIPTION With MT-200 package ·High power dissipation ·High current capability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Design for audio power amplifier and general
purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
17
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
5
A
200
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC2774
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