isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 250V (Min) ·Complement to Type 2SA1361 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for TV chroma output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
250
V
VCEO Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
5.
0
V
IC
Collector Current-Continuous
50
mA
ICP
Collector Current-Peak
100
mA
IB
Base Current-Continuous
PC
Collector Power Dissipation @ Ta=25℃
TJ
Junction Temperature
20
mA
1.
5
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃...