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2SC3405

Toshiba Semiconductor
Part Number 2SC3405
Manufacturer Toshiba Semiconductor
Description Silicon NPN Triple Diffused Type TRANSISTOR
Published Mar 22, 2005
Detailed Description TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC3405 2SC3405 Switching Regulator and High Voltage Switching App...
Datasheet PDF File 2SC3405 PDF File

2SC3405
2SC3405

Overview
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC3405 2SC3405 Switching Regulator and High Voltage Switching Applications High Speed DC-DC Converter Applications Industrial Applications Unit: mm • Excellent switching times: tr = 1.
0 μs (max) tf = 1.
0 μs (max), (IC = 0.
3 A) • High collector breakdown voltage: VCEO = 800 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 900 V Collector-emitter voltage VCEO 800 V Emitter-base voltage VEBO 8 V Collector current DC Pulse IC 0.
8 A ICP 1.
5 Base current IB 0.
2 A Collector power dissipation Ta = 25°C Tc = 25°C PC 1.
0 W 20 JEDEC JEITA ― ― Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C TOSHIBA 2-7J1A Weight: 0.
36 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2010-02-05 Electrical Characteristics (Ta = 25°C) 2SC3405 Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol Test Condition ICBO IEBO V (BR) CBO V (BR) CEO hFE VCE (sat) VBE (sat) VCB = 800 V, IE = 0 VEB = 8 V, IC = 0 IC = 1 mA, IE = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 0.
3 A IC = 0.
3 A, IB = 0.
06 A IC = 0.
3 A, IB = 0.
06 A Min Typ.
Max Unit ― ― 100 μA ―― 1 mA 900 ― ― V 800 ― ― V 6...


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