isc Silicon
NPN Power
Transistor
2SC3557
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= 1.
0V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
6
A
40
W
150
℃
Tstg
...