isc Silicon
NPN Power
Transistors
2SC3591
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min) ·Fast Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high definition CRT display horizontal deflection
output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
400
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
12
A
IB
Base Current-Continuous
PT
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
4
A
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