isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= 900V(Min.
) ·Wide Area of Safe Operation ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
900
V
VCES
Collector-Emitter Voltage
900
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
5
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25℃ PC
Collector Power Dissipation
@TC=25℃...