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2SC3904

Panasonic Semiconductor
Part Number 2SC3904
Manufacturer Panasonic Semiconductor
Description Silicon NPN Transistor
Published Mar 22, 2005
Detailed Description Transistor 2SC3904 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit: mm 2.8 –0.3 +0.2 s ...
Datasheet PDF File 2SC3904 PDF File

2SC3904
2SC3904

Overview
Transistor 2SC3904 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit: mm 2.
8 –0.
3 +0.
2 s Features q q 0.
65±0.
15 +0.
25 1.
5 –0.
05 0.
65±0.
15 0.
95 2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 1.
1 –0.
1 (Ta=25˚C) Ratings 15 10 2 65 200 150 –55 ~ +150 Unit V V V mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : 3S s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Transition frequency Collector output capacitance Foward transfer gain Maximum unilateral power gain Noise figure (Ta=25˚C) Symbol ICBO IEBO hFE fT Cob | S21e |2 GUM NF Conditions VCB = 10V, IE = 0 VEB = 1V, IC = 0 VCE = 8V, IC = 20mA VCE = 8V, IC = 20mA, f = 0.
8GHz VCB = 10V, IE = 0, f = 1MHz VCE = 8V, IC = 20mA, f = 1.
5GHz VCE = 8V, IC = 20mA, f = 1.
5GHz VCE = 8V, IC = 7mA, f = 1.
5GHz 7 50 7.
0 120 8.
5 0.
6 9 10 2.
2 3 1 min typ max 1 1 300 GHz pF dB dB dB Unit µA µA 0 to 0.
1 0.
1 to 0.
3 0.
4±0.
2 0.
8 0.
16 –0.
06 +0.
2 +0.
1 0.
4 –0.
05 +0.
1 High transition frequency fT.
Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
0.
95 2.
9 –0.
05 1 1.
9±0.
2 +0.
2 3 1.
45 1 Transistor PC — Ta 240 30 Ta=25˚C 200 25 IB=250µA 100 2SC3904 IC — VCE 120 VCE=8V IC — VBE Collector power dissipation PC (mW) Collector current IC (mA) Collector current IC (mA) 160 20 200µA 80 Ta=75˚C 60 25˚C 120 15 150µA –25˚C 80 10 100µA 40 40 5 50µA 20 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.
2 0.
4 0.
6 0.
8 1.
0 1.
2 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (...


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