isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V (Min) ·High Power Dissipation ·High Current Capability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Audio power amplifier, power switching applications.
·DC-DC converter and
regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
30
A
IE
Emitter Current-Continuous
30
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperat...