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2SD1005

GME
Part Number 2SD1005
Manufacturer GME
Description NPN SILICON EPITAXIAL TRANSISTOR
Published May 17, 2018
Detailed Description NPN SILICON EPITAXIAL TRANSISTOR FEATURES  High Collector to Base Voltage.  Excellent DC Current Gain Linearity.  Co...
Datasheet PDF File 2SD1005 PDF File

2SD1005
2SD1005

Overview
NPN SILICON EPITAXIAL TRANSISTOR FEATURES  High Collector to Base Voltage.
 Excellent DC Current Gain Linearity.
 Complements to PNP type 2SB804.
Pb Lead-free Production specification 2SD1005 ORDERING INFORMATION Type No.
Marking 2SD1005 BW/BV/BU SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO VCEO VEBO IC PC Tj Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature 100 80 5 1 500 150 -55 to +150 V V V A mW ℃ ℃ E056 Rev.
A www.
gmesemi.
com 1 Production specification NPN SILICON EPITAXIAL TRANSISTOR 2SD1005 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector cut-off current ICBO VCB=100V, IE=0 0.
1 uA Emitter cut-off current IEBO VEB=5V,IC=0 0.
1 uA Collector-emitter saturation voltage VCE(sat) IC/IB=500...


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