isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 40V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.
0V(Max) @IC= 3.
0A ·Complement to Type 2SB435 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
Collector Power Dissipation
@ Ta=25℃ PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
3.
0
A
1.
5 W
25
150
℃
Tstg...