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2SD2000

Panasonic Semiconductor
Part Number 2SD2000
Manufacturer Panasonic Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description Power Transistors 2SD2000 Silicon NPN triple diffusion planar type For power switching 0.7±0.1 Unit: mm 10.0±0.2 5.5±0...
Datasheet PDF File 2SD2000 PDF File

2SD2000
2SD2000

Overview
Power Transistors 2SD2000 Silicon NPN triple diffusion planar type For power switching 0.
7±0.
1 Unit: mm 10.
0±0.
2 5.
5±0.
2 2.
7±0.
2 4.
2±0.
2 φ3.
1±0.
1 1.
4±0.
1 1.
3±0.
2 0.
8±0.
1 0.
5 +0.
2 –0.
1 2.
54±0.
25 5.
08±0.
5 1 2 3 4.
2±0.
2 s Features q q q q High-speed switching Satisfactory linearity of foward current transfer ratio hFE Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg 16.
7±0.
3 14.
0±0.
5 Ratings 80 60 6 8 4 1 35 2 150 –55 to +150 Unit V V V A A A W ˚C ˚C Solder Dip 4.
0 7.
5±0.
2 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Base to emitter saturation voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2 VBE(sat) VCE(sat) fT ton tstg tf * Conditions VCB = 80V, IE = 0 VEB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 4A VCE = 4V, IC = 4A IC = 4A, IB = 0.
4A VCE = 12V, IC = 0.
2A, f = 10MHz IC = 4A, IB1 = 0.
4A, IB2 = – 0.
4A, VCC = 50V min typ max 100 100 Unit µA µA V 60 70 20 2.
0 1.
5 80 0.
3 1.
0 0.
2 250 V V MHz µs µs µs FE1 Rank classification Q 70 to 150 P 120 to 250 Rank hFE1 1 Power Transistors PC — Ta 40 4 (1) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) IB=40mA TC=25˚C 2SD2000 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=10 30 10 3 1 0.
3 TC=100˚C 0.
1 0.
03 0.
01 0.
01 0.
03 25˚C –25˚C VCE(sat) — IC Collector power dissipatio...


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