isc Silicon
NPN Power
Transistor
DESCRIPTION ·Large Current Capability-IC= 5A ·High DC Current Gain-
: hFE= 120-560 @ IC= 0.
5A ·Low Saturation Voltage -
: VCE(sat)= 0.
5V(Max)@ IC= 3A, IB= 60mA ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Suited for the output stage of 3 watts audio amplifier,
voltage
regulator, DC-DC converter and relay driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
20
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
5
A
ICP
Collector Current-Pulse t= 100ms
8
A
Collector Pow...